硅晶圆Semi Wafer

友达晶材掌握累积数十年卓越的长晶技术，有精湛的模拟技术以及设备开发能力，搭配先进的切割技术和完美的端面导角与面研磨，提供给客户高品质且客製化的产品。同时，专业精緻的边缘抛光也是产品的亮点，可大幅改善边缘成膜剥落所产生微粒(particle)问题，提供稳定且高水准的晶圆硅晶片。

 

Item

Specification

Conductivity

P / N

Dopant Type

Boron / Phosphorus

Outer Diameter (mm)

200 ±.0.2

Resistivity (Ω cm)

≧0.5 (standard specification)

< 0.05 (high dope specification)

Thickness (μm)

725 ±25 (standard specification)

550~1,000 (customized specification)

LPD

≦50ea(≧0.12μm）or ≦20ea(≧0.2μm）

SurfaceMetal Impurity (atoms/cm2)

≦1E+10

12吋硅晶圆产品规格

 

Item

Specification

Conductivity

P / N

Dopant Type

Boron / Phosphorus

Outer Diameter (mm)

300 ±.0.2

Resistivity (Ω cm)

≧0.5 (standard specification)

< 0.05 (high dope specification)

Thickness (μm)

775 ±25 (standard specification)

LPD

65nm<50ea, 40nm<100ea

SurfaceMetal Impurity (atoms/cm2)

≦1E+10