矽晶圓Semi Wafer

友達晶材掌握累積數十年卓越的長晶技術，有精湛的模擬技術以及設備開發能力，搭配先進的切割技術和完美的端面導角與面研磨，提供給客戶高品質且客製化的產品。同時，專業精緻的邊緣拋光也是產品的亮點，可大幅改善邊緣成膜剝落所產生微粒(particle)問題，提供穩定且高水準的晶圓矽晶片。

 

Item

Specification

Conductivity

P / N

Dopant Type

Boron / Phosphorus

Outer Diameter (mm)

200 ±.0.2

Resistivity (Ω cm)

≧0.5 (standard specification)

< 0.05 (high dope specification)

Thickness (μm)

725 ±25 (standard specification)

550~1,000 (customized specification)

LPD

≦50ea(≧0.12μm）or ≦20ea(≧0.2μm）

SurfaceMetal Impurity (atoms/cm2)

≦1E+10

12吋矽晶圓產品規格

 

Item

Specification

Conductivity

P / N

Dopant Type

Boron / Phosphorus

Outer Diameter (mm)

300 ±.0.2

Resistivity (Ω cm)

≧0.5 (standard specification)

< 0.05 (high dope specification)

Thickness (μm)

775 ±25 (standard specification)

LPD

65nm<50ea, 40nm<100ea

SurfaceMetal Impurity (atoms/cm2)

≦1E+10