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Products
║Products║★Semiconductor

1.Semi Wafer 

2.Semi Parts 

1.Semi Wafer

ACC has demonstrated decades of outstanding skills and techniques on ingot growth and diamond wire wafer slicing, going with state-of-the-art wafer beveling and lapping process to deliver high quality and customized products to our valued customers.

8”Semi Wafer Specification

Item
Specification
Conductivity P / N
Dopant Type Boron / Phosphorus
Outer Diameter (mm) 200 ±.0.2

Resistivity (Ω cm)

≧0.5 (standard specification)
<0.05 (high dope specification)

Thickness (μm)

725 ±25 (standard specification)
550~1,000 (customized specification)
LPD ≦50ea(≧0.12μm)or  ≦20ea(≧0.2μm)
SurfaceMetal Impurity (atoms/cm2) ≦1E+10 

 

12”Semi Wafer Specification

Item
Specification
Conductivity P / N
Dopant Type Boron / Phosphorus
Outer Diameter (mm) 300 ±.0.2

Resistivity (Ω cm)

≧0.5 (standard specification)
<0.05 (high dope specification)
Thickness (μm) 775 ±25 (standard specification)
LPD 65nm<50ea, 40nm<100ea
SurfaceMetal Impurity (atoms/cm2) ≦1E+10 

 

2.Semi Parts

Item
Specification
Mono crystalline Slip free,  P-type (Boron Dopant) >6N
Range of resistivity (Ω cm) 0.001~100 ohm-cm
Range of outer diameter 150~450 mm
Range of thickness 1~30 mm