║Products║★Semiconductor
1.Semi Wafer
2.Semi Parts
1.Semi Wafer
ACC has demonstrated decades of outstanding skills and techniques on ingot growth and diamond wire wafer slicing, going with state-of-the-art wafer beveling and lapping process to deliver high quality and customized products to our valued customers.
8”Semi Wafer Specification
|
Item
|
Specification
|
| Conductivity | P / N |
| Dopant Type | Boron / Phosphorus |
| Outer Diameter (mm) | 200 ±.0.2 |
|
Resistivity (Ω cm) |
≧0.5 (standard specification) |
| <0.05 (high dope specification) | |
|
Thickness (μm) |
725 ±25 (standard specification) |
| 550~1,000 (customized specification) | |
| LPD | ≦50ea(≧0.12μm）or ≦20ea(≧0.2μm） |
| SurfaceMetal Impurity (atoms/cm2) | ≦1E+10 |
12”Semi Wafer Specification
|
Item
|
Specification
|
| Conductivity | P / N |
| Dopant Type | Boron / Phosphorus |
| Outer Diameter (mm) | 300 ±.0.2 |
|
Resistivity (Ω cm) |
≧0.5 (standard specification) |
| <0.05 (high dope specification) | |
| Thickness (μm) | 775 ±25 (standard specification) |
| LPD | 65nm<50ea, 40nm<100ea |
| SurfaceMetal Impurity (atoms/cm2) | ≦1E+10 |
2.Semi Parts
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